PART |
Description |
Maker |
UPC2762T-E3 UPC2763T-E3 UPC2762T UPC2763T |
3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER
|
NEC[NEC]
|
INA-34063 |
3.0 GHz Medium Power Silicon RFIC Amplifier(3.0 GHz中等功率硅射频集成电路放大器) 3V Fixed Gain. Medium Power Amplifier 3.0 GHz的中功率硅射频放大器.0千兆赫中等功率硅射频集成电路放大器)
|
Agilent(Hewlett-Packard)
|
MW4IC001MR4 MW4IC001MR406 |
RF LDMOS Wideband Integrated Power Amplifier 800??170 MHz, 900 mW, 28 V W??DMA RF LDMOS Wideband Integrated Power Amplifier
|
Freescale Semiconductor, Inc MOTOROLA
|
2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN Medium power transistor (60V/ 1A) Medium power transistor (−60V, −1A) Medium power transistor (-60V, -1A)
|
TE Connectivity, Ltd. ROHM[Rohm]
|
STM51004A STM51004G STM51004X STM51005A STM51005G |
1300 nm Laser in Receptacle Package, Medium Power 1300 nm激光在插孔包,中功 (STM51004 / STM51005) 1300 nm Laser in Receptacle Package / Medium Power 1300 nm Laser in Receptacle Package,Medium Power 1300 nm Laser in Receptacle Package Medium Power From old datasheet system 1300 nm Laser, Medium Power
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc. Agilent (Hewlett-Packard)
|
TGA1073A TGA1073A-SCC |
26- 34 GHz Medium Power Amplifier 26000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TriQuint Semiconductor, Inc. TRIQUINT[TriQuint Semiconductor]
|
AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER Gain Block Amplifiers The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
BCP54 BCP54-16 BCP56-10 BCP56-16 BCP55-10 BCP55-16 |
NPN medium power transistors TRANSISTOR MEDIUM POWER 晶体管中功率
|
NXP Semiconductors PHILIPS[Philips Semiconductors] Microchip Technology, Inc.
|
HA7-2840883 FN3594 HA1-2840_883 HA1-2840883 HA7-28 |
From old datasheet system Very High Slew Rate Wideband Operational Amplifier Very High Slew Rate/ Wideband Operational Amplifier Very High Slew Rate,
Wideband Operational Amplifier(高转换率、宽带运算放大器) Very High Slew Rate, Wideband Operational Amplifier 甚高摆率,宽带运算放大器 Very High Slew Rate, Wideband Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, 500 MHz BAND WIDTH, CDIP14
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
LMA443 |
31GHz Medium Power Amplifier 31 GHz Medium Power Amplifier
|
FILTRONIC[Filtronic Compound Semiconductors]
|